ST announces 1, 2 and 4-Mbit Serial Flash memories for the Automotive Market
STMicroelectronics has announced a new generation of its serial Flash memory chips, with densities from 1 to 4 Mbit, which are intended specifically for demanding automotive applications with high reliability requirements.
Integrated logic and 12Mbit memory chip replaces FPGAs and RAM for video buffering
DT Electronics has introduced the Logic Devices LF3312 frame buffer / FIFO. The new device simplifies the design of digital video and data buffering systems by replacing both standard synchronous Random Access Memories (RAM) and Field Programmable Gate Array (FPGA) logic with a single chip. The LF3312 is the most flexible memory device for buffering multiple video formats. It uses both sequential and random access addressing and integrates both h...
2GB miniSD memory card announced by Toshiba
Toshiba Electronics Europe (TEE) has announced an expanded line-up of large capacity miniSD memory cards with the introduction of a 2GB capacity card. The new Toshiba-branded miniSD card will be available from mid-June 2006.
Ramtron's FRAM technology will make auto airbags smart
Ramtron International has announced that Hyundai Autonet of Korea has selected its non-volatile FRAM memory technology for smart airbags and occupant sensors in Hyundai automobiles among others. FRAM’s unparalleled write endurance along with its fast data collection capability makes it an ideal non-volatile memory technology for today’s sophisticated airbag systems.
Storage peripheral solution for portable consumer products
QuickLogic Europe announces that its low-power QuickIDE bus-to-bus bridging IC interoperates with Hitachi Global Storage Technologies' one-inch Microdrive hard drive, delivering a complete mass storage peripheral solution for portable consumer products based on Intel embedded processors.
ISi Announces Silicon Validation of Z-RAM Technology
Innovative Silicon Inc. (ISi), the developer of Z-RAM™ high density memory IP, has announced that it has achieved silicon validation of Z-RAM memory arrays on 90nm SOI process technologies. The company also announced that it has validated its memory bitcell (which requires only one transistor and zero capacitors) in an additional 10 fabrication processes that include 130nm SOI, 90nm SOI, and FinFET technologies. The company expects to demonstr...
Zero capacitor memory technology proved realisable on FinFET/TriGate device geometries
In a paper given by Innovative Silicon Inc. (ISi) at the recent IEEE SOI Conference, the company claims to prove the manufacturability of its Z-RAM (zero capacitor) embedded memory technology in FinFET and TriGate devices with geometries below 45nm.