Memory

CMOS DDR2 SDRAMs available in 512Mb & 1Gb densities

10th March 2014
Staff Reporter
Datasheets

A line of high-speed CMOS DDR2 SDRAMs has been announced by Alliance Memory. The devices feature densities of 512Mb (AS4C32M16D2) and 1Gb (AS4C64M16D2, AS4C128M8D2) in 60-ball 8 x 10 x 1.2-mm and 84-ball 8 x 12.5-x 1.2-mm FBGA packages.

The devices released today provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in automotive, industrial, consumer, and networking products requiring high memory bandwidth. The AS4C32M16D2 is internally configured as four banks of 8M words x 16 bits. The AS4C64M16D2 and AS4C128M8D2 are internally configured as eight banks of 8M x 16 bits and 16M x 8 bits, respectively. The DDR2 SDRAMs offer a synchronous interface, operate from a single + 1.8-V (± 0.1 V) power supply, and are lead (Pb)- and halogen-free. 

The AS4C32M16D2, AS4C64M16D2, and AS4C128M8D2 feature a fast clock rate of 400 MHz and a data rate of 800 Mbps/pin, and they are offered in commercial (0 °C to +85 °C), industrial (-40 °C to + 95 °C), and automotive (-40 °C to +105 °C) temperature ranges. The DDR2 SDRAMs provide programmable read or write burst lengths of 4 or 8. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh while a programmable mode register allows the system to choose the most suitable modes to maximize performance.

Samples of the new DDR2 SDRAMs are available now, with lead times of six to eight weeks for production quantities. 

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