Infineon announces true 2kV class SiC MOSFET and roadmap for more

It is designed for an over-voltage margin to 1500V DC and is sampling now in a new high voltage discrete TO package, as well as the company’s EasyPack and 62mm, half bridge configuration.

The high voltage addition to the CoolSiC portfolio targets photovoltaic (PV), EV charging and energy storage systems. The SiC MOSFET is characterised by what Infineon says is industry leading low RDS(on) and a high gate voltage operating range. The high blocking voltage combined with low switching losses makes the 2kV CoolSiC suitable for 1500V DC systems. It also has a rugged body diode for hard switching, over-voltage margin and lower FIT (failure in time) rates due to cosmic rays that 1700V DC SiC MOSFETs. Target applications are the demanding environments of PV systems, where they reduce both system cost and size, said Friedrichs, EV charging, for faster charging cycles, industrial power supplies where they can deliver higher efficiency while reducing the total cost of ownership and e-mobility applications to enable a higher reach per charge using a more compact main inverter.

The 2kV CoolSiC is offered in an EasyPack 3B with four-channel boost configuration, with production scheduled to begin Q3 2022. This DF4-19MR20W3M1HF_B11 module (pictured) has RDS(on) of 19mΩ. A target application is as a MPPT (maximum power point tracker) in a 1500V PV string inverter. Production is scheduled to begin Q4 2022.

The FF3MR20KM1H, FF4MR20KM1H and FF6MR20KM1H 62mm packages have RDS(on) or 3mΩ, 4mΩ and 6mΩ  respectively. They are intended for a variety of applications including auxillary traction converters, EV charging, energy storage and circuit breakers.

MOSFET and diode versions in a 2kV package in a TO247-Plus package will be available at the end of 2022. They are suitable for PV, EV charging, energy storage and in circuit breakers.

The SiC MOSFET is based on Infineon’s M1H technology and Infineon says advances have resulted in “a significantly larger gate voltage window” to improve RDS(on) while protecting against driver- and layout-related voltage peaks at the gate, without any restrictions, even at high switching frequencies.

A range of EiceDriver gate drivers with functional isolation of up to 2.3kV is available to support the 2kV SiC MOSFETs.

Visit Infineon at PCIM Europe – Hall 7-412