SiC MOSFET module offers low switching losses

3rd June 2015
Source: Cissoid
Posted By : Barney Scott
SiC MOSFET module offers low switching losses

CISSOID has released CHT-PLUTO, a dual Silicon Carbide MOSFET module primarily meant for half-bridges with 30A continuous capability for both low-side and high-side, delivering up to 60A. The two independent switches can be used in parallel to deliver a total of 60A with a breakdown voltage in excess of 1200V and a low on-resistance of 23mΩ at 25°C and 50mΩ at 225°C at VGS=20V.

High operating frequencies can be used thanks to the low switching losses of the SiC transistors. CHT-PLUTO also embeds freewheeling Schottky diodes with a low forward voltage Vf that reduces the power dissipation during dead times. Each switch can be controlled with a standard -5/+20V gate voltage.

Operating reliably between -55 and +225°C, CHT-PLUTO is available in a hermetically sealed 8 pins proprietary HM8A metal package with dimensions of 18x29mm excluding mounting tabs. The devices are electrically isolated from the case of the package. The module features a low junction-to-case thermal resistance of 0.7°C/W for each 30A channel. Two additional sources connectors allow for an easy and robust connection to the gate driver.

CHT-PLUTO is suitable to implement a half bridge for applications such as power converters, inverters or motor drives. When putting the two switches in parallel, CHT-PLUTO can handle 60A with a lower Rth of 0.35°C/W. Several modules can also be parallelised to handle even higher current.

CISSOID’s recently announced high temperature gate driver technology, HADESv2, is a suitable companion to drive CHT-PLUTO. Thanks to its high peak current capability and its high dV/dT robustness, HADESv2 allows for very fast switching, reducing the power dissipation in the module. With these optimisations, the power designer can increase the operating frequency and hence select lower values for the passive components (input/output filters, decoupling capacitors) and save a lot on the high cost on these components, as well as the volume and weight of the system. The combination of CHT-PLUTO and HADESv2 opens the door for the implementation of very compact and highly integrated power converters / motor drivers with power rating from a few kW to tens of kW, working reliably up to 225°C.

Pierre Delatte, CTO, CISSOID, said: “CHT-PLUTO is the second product in our offering for power switches at high temperature / high voltage. After CHT-NEPTUNE, our 10A/1200V single switch introduced in 2013, CHT-PLUTO brings a half bridge module with higher current rating and still supporting the extreme environments from -55°C to +225°C. We are proud to release CHT-PLUTO after intensive R&D efforts to meet the challenges of reliability at high temperature. CHT-PLUTO actually brings the system designers what they know they can expect from a CISSOID product: it does what it says. This module enables new possibilities for high power applications at high temperature, without compromising the robustness of the solution.”

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