Power

IR Introduces Automotive DirectFET®2 Power MOSFETs Optimized for Class D Applications

23rd August 2010
ES Admin
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The AUIRF7640S2, AUIRF7647S2 and AUIRF7675M2 devices expand IR’s portfolio of automotive DirectFET®2 power MOSFETs for Class D Audio systems, and are optimized with low gate charge (Qg) to improve Total Harmonic Distortion (THD) and efficiency, while low Diode Reverse Recovery Charge (Qrr) further improves THD and lowers EMI.
With a footprint smaller than an SO-8, the AUIRF7640S2 and AUIRF7647S2 Small Can devices are capable of delivering 100W per channel into an 8 Ohm load with no heat sink to offer an exceptionally compact class D solution ideal for saving PCB space where multiple channels are required. The Medium Can AUIRF7675M2 device, which features a footprint 54 percent smaller than a DPak is capable of delivering 250 W per channel into a 4 Ohm load with no heat sink making it well suited for the sub-woofer output stage of class D audio systems.

As with all DirectFET® products, the new devices offer minimal thermal impedance and parasitic package resistance and inductance to deliver excellent power density and efficiency facilitated by dual-sided cooling.

The devices are qualified according to AEC-Q101 standards, feature an environmentally friendly, lead-free and RoHS compliant bill of materials, and are part of IR’s automotive quality initiative targeting zero defects.

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