GaN power switching transistors stack to shrink

3rd May 2016
Source: AT&S
Posted By : Caroline Hayes
GaN power switching transistors stack to shrink

Small, reliable, high-voltage GaN power switching transistors from GaN Systems are provided in compact GaNPX packages for integration into power and wireless modules, media codecs and high signal integrity applications, such as sensors and amplifiers.

GaNPX packaging is a near-chipscale embedded package which offers high current density, a low profile, optimal thermal performance and extremely low inductance, using no wirebonds. The product portfolio offered includes 100 and 650V devices in both top-side and bottom-side cooling packages, with current handling up to 90A and RDS(ON) down to 7mΩ.

The company will exhibit the devices at PCIM 2016 (10 to 12 May, Nuremberg, Germany) and acknowledges the role of AT&S (Austria Technologie & Systemtechnik Aktiengesellschaft) and its Embedded Component Packaging (ECP) technology in the miniaturisation of the transistors.

The power devices integrate a GaN power switching transistor in the GaNPX package, built using ECP technology. The challenge of designing the next generation of power supplies is to increase efficiency and also the power density. Compared to silicon, GaN offers lower on-resistance, superior fast-switching capabilities and zero reverse recovery losses for a more efficient conversion, higher efficiency and higher power density with no additional losses. GaN Systems, in close co-operation with AT&S, was able to reduce size and costs of the devices.


The design and manufacturing capability is claimed to simplify the use of GaN power transistors in embedded subsystems. According to Greg Klowak, director of R&D at GaN Systems: “Unlike approaches that source the transistors and integration method separately, Embedded Power based on AT&S ECP technology provides tested and proven GaN die integration that optimizes inductance, current handling and thermal performance for rapid, low risk system implementation.” Using laminate chip embedding, AT&S has supported the company to develop the GaN transistors. According the company, the major advantages of ECP technology, compared to standard IC packing and PCB assembly are form factor reduction through integration, higher reliability and improved thermal management. It is also claimed to provide the possibility to integrate EMI shielding, support CTE (Co-efficients of Thermal Expansion) matching and make system integration faster and easier.

Visit GaN Systems: PCIM 2016 - Hall 9 - 511; and AT&S - Hall 6 - 323

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