60V MOSFET optimises performance

4th October 2016

Toshiba

Alice Matthews

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Datasheet

The offering of compact, high-efficiency, high-speed switching MOSFETs from Toshiba Electronics Europe has expanded further. The U-MOS IX-H family has a SMD device offering a maximum V_DSS rating of 60V and a maximum drain current of 100A. The TPH1R306PL is supplied in a SOP Advance surface mount package and has an ultra-low typical on resistance (RDS(ON) of just 1.0mΩ (VGS = 10V).

Because Toshiba’s U-MOS IX-H process enables a trade-off between RDS(ON) and output capacitance/output charge, typical QOSS is just 77.5nC. This allows designers to further improve system performance and efficiency by raising switching speeds and reducing switching losses.

As with other members of the U-MOS IX-H family, the TPH1R306PL MOSFET is suited to use in DC/DC converters and the secondary side of AC/DC power supplies. By choosing the MOSFET, designers of the latter have the opportunity to significantly improve system efficiency, as QOSS is one of the causes of synchronous rectification power loss.

Due to a high pulse current capability (Idp) up to 500A and an increased maximum channel temperature of 175ºC, the new MOSFET will also suit motor applications in cordless home appliances and power tools. For applications that require further improved heat dissipation, a double sided cooled version - TPW1R306PL - is available.