NXP takes GaN mainstream at EuMW 2012

At European Microwave Week 2012 we demonstrate our GaN portfolio: CLF1G0060(S)-10, CLF1G0060(S)-30, CLF1G0035(S)-50, CLF1G0035(S)-100, CLF1G0035(S)-100P and CLF1G0035(S)-200P. Features include:

• High frequencies, bandwidth up to 6 GHz
• High efficiencies
• Excellent linearity
• High power density
• High thermal conductivity
• Operation at higher temperatures, without loss of reliability
• Excellent ruggedness

https://www.youtube.com/watch?v=YIcXYDieRJM

Keep Up to Date with the Most Important News

By pressing the Subscribe button, you confirm that you have read and are agreeing to our Privacy Policy and Terms of Use
Previous Post

Volvo V60 Plug-In Hybrid - Highest Safety Score Ever For An Electrified Car In Euro NCAP

Next Post

Homogeneous Beam Profile in Pulsed Laser Diodes