GaN process for high power mmWave applications

6th June 2019
Posted By : Alex Lynn
GaN process for high power mmWave applications

Pure-play compound semiconductor foundry, WIN Semiconductors, has expanded its gallium nitride (GaN) portfolio with the commercial release of a 0.15?m-gate technology, NP15-00, that supports emerging mmWave PA applications including radar, satellite communications and 5G massive MIMO infrastructure.

The NP15-00 technology supports full MMICs enabling WIN customers to design compact, linear or saturated high power amplifiers through 35GHz.

The NP15-00 gallium nitride technology employs a source-coupled field plate for improved breakdown voltage, and operates at a drain bias of 20V. This technology is fabricated on 100mm silicon carbide substrates with through-wafer vias for low inductance grounding.

In the 29GHz band, NP15-00 offers saturated output power of three watts/mm with 13 dB linear gain and greater than 50% efficiency without harmonic tuning.

David Danzilio, Senior Vice President of WIN Semiconductors, said: "The release of NP15 expands WIN's portfolio of mmWave compound semiconductor technologies for transmit power amplifiers used in 5G mmWave radio access networks, satellite communications and radar systems.

“For mmWave active arrays, the higher transmit power and efficiency from NP15 affords designers greater flexibility to optimise antenna count, PA size and total array power. Depending on where deployed, mmWave RAN infrastructure will leverage access points of various sizes, shapes and power levels, and a broad trade-space is crucial to optimise the performance and economics of mmWave active antenna systems.”

NP15-00 sample kits are available and can be obtained by contacting WIN's regional sales managers.

WIN Semiconductors Corp. will be showcasing its compound semiconductor RF and mm-Wave solutions in booth 772 at the 2019 IEEE MTT International Microwave Symposium in Boston, Massachusetts being held June 2nd to 7th, 2019.


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