Manufacturer of silicon carbide (SiC) power semiconductors, UnitedSiC, has announced its Generation 3 1,200 and 650V silicon carbide JFETs, expanding its existing portfolio of standalone normally-ON SiC JFETs. 

History has a habit of repeating itself, or so the often-quoted phrase goes. Sometimes our human fallibility does indeed lead us to repeat mistakes from the past, while on other occasions, a concept or technique leads us back to an approach that was once of value but ended up consigned to textbook history. The electronics industry is no stranger to picking up ideas from the past, dusting them off and giving them a new lease of life or incorporati...

  Manufacturer of silicon carbide (SiC) power semiconductors, UnitedSiC has opened an office in Shenzhen, China, and appointed Henry Jiang as Senior Sales Manager for the South China region. Jiang joins the company from STMicroelectronics, where he was the team leader of the power division.

A ‘cascode’ sounds like an archaic term from the era of vacuum tubes and that’s where it comes from. Cascodes today, though, are very relevant in their latest incarnation as combinations of SiC JFETs and Si MOSFETs, giving performance that’s getting very close to the suitable switch. Guest blog by Zhongda Li, NPI Manager at UnitedSiC.

Silicon Carbide (SiC) and Gallium Nitride (GaN) semiconductor technologies are promising great things for the future. SiC devices in a cascode configuration enable existing systems to be easily upgraded to get the benefits of wide band-gap devices right now. By: Anup Bhalla, VP Engineering, UnitedSic.

Designers of Power Factor Correction stages (PFCs), Active Frontend Rectifiers, LLC converters and Phase Shift Full Bridge converters can now upgrade existing system performance by using the UJ3C1200 series of SiC JFET cascodes from UnitedSiC. With a voltage rating of 1200V and ON-resistances of 80 and 40 milliohms, these devices offer a ‘drop-in’ replacement solution for many existing IGBT, Si-MOSFET and SiC-MOSFET parts, with no cha...

Wide band-gap devices have yet to break into the EV market in a meaningful way, but the stage is set for them to become the technology of choice as they drop in cost and demonstrate the performance and reliability needed. By Anup Bhalla, VP Engineering at UnitedSiC.

Manufacturer of Silicon Carbide (SiC) power semiconductors, UnitedSiC has announced the UJ3C series of 650V SiC FETs as drop-in replacements for silicon Superjunction MOSFETs. Available in standard TO-220, TO-247 and D2PAK-3L packages, they operate with standard Si-MOSFET gate drive, eliminating the need to re-design drive circuits, while offering low RDS (ON) and low gate charge to reduce system losses.