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IMEC articles

Displaying 1 - 20 of 189

Manufacturability of spin-orbit torque MRAM devices demonstrated at Symposia

Manufacturability of spin-orbit torque MRAM devices demonstrated at Symposia
At the 2018 Symposia on VLSI Technology and Circuits, Imec demonstrated the possibility to fabricate spin-orbit torque MRAM (SOT-MRAM) devices on 300mm wafers using CMOS compatible processes. 
19th June 2018

Compact low power CMOS radar features on-chip antennas

Compact low power CMOS radar features on-chip antennas
At the International Microwave Symposium in Philadelphia, US, Imec announced the first CMOS 140GHz radar-on-chip system with integrated antennas in standard 28nm technology. The achievement is an important step in the development of radar-based sensors for a myriad of smart intuitive applications, such as building security, remote health monitoring of car drivers, breathing and heart rate of patients, and gesture recognition for man-machine interaction.
11th June 2018

Low power radio for IoT applications demonstrated with Arm

Low power radio for IoT applications demonstrated with Arm
  At this year’s Bluetooth Asia event, imec will demonstrate a new ultra low power radio for IoT applications, with Arm (at booth 49). The radio combines imec’s latest transceiver frontend, operating from a nominal supply as low as 0.8V, with Arm’s qualified and silicon-proven Cordio Bluetooth low energy 5 digital baseband.
30th May 2018


Eye tracking technology enhances AR/VR experiences

Eye tracking technology enhances AR/VR experiences
At its Imec Technology Forum in Antwerp (ITF Belgium 2018), Imec announced a new wireless eye-tracking technology based on electro-oculography (EOG), an ophthalmology technique used to examine eyes and record eye movement.
29th May 2018

Paving the way to GaN power technology

Paving the way to GaN power technology
Research and innovation hub in nanoelectronics and digital technologies, imec, and fabless technology innovator, Qromis, have announced the development of high performance enhancement mode p-GaN power devices on 200mm engineered Coefficient of Thermal Expansion (CTE)-matched substrates, processed in imec’s silicon pilot line. The substrates are offered by Qromis as commercial 200mm QST substrates as part of their patented product portfolio.
9th April 2018

Ultra-low power transceiver suitable for Bluetooth 5

Ultra-low power transceiver suitable for Bluetooth 5
  A low-voltage (0.8V) ultra-low-power Bluetooth 5 transceiver for IoT applications has been announced by imec and Renesas Electronics at the 2018 International Solid-State Circuits Conference in San Francisco (US). The low supply voltage enables a longer battery life, with up to 50% improvement.
13th February 2018

Ga-doped Ge source/drain contacts achieve low contact resistivity

Ga-doped Ge source/drain contacts achieve low contact resistivity
At the International Electron Devices Meeting (IEDM), imec reported ultralow contact resistivity of 5x10-10Ωcm2 on Gallium (Ga)-doped p-Germanium (Ge) source/drain contacts. The low contact resistivity and high level of Ga activation were achieved after nanosecond laser activation (NLA) at low thermal budget. The results show that highly Ga-doped Ge-rich source/drain contacts provide a promising route for suppressing parasitic source/drain resistance in advanced pMOS devices.
8th December 2017

Heterogeneous sequential for advanced CMOS nodes

Heterogeneous sequential for advanced CMOS nodes
  At the 2017 International Electron Devices Meeting (IEDM), imec, research and innovation hub in nano-electronics and digital technology, presented the first Power-Performance-Area-Cost (PPAC) analysis of different sequential 3D-integration variants using advanced 5nm and 3nm CMOS technology nodes.
6th December 2017

Nanocomposite electrolyte designed for next-gen battery use

Nanocomposite electrolyte designed for next-gen battery use
  At the Imec Technology Forum Japan, imec and Panasonic, announced that they have developed a solid nanocomposite electrolyte for next-gen batteries with a lithium ion conductivity several times greater than its liquid equivalent. The ion conductivity already reaches several mS/cm at room temperature.
15th November 2017

200 and 650V e-mode devices developed on 200mm Si wafers

200 and 650V e-mode devices developed on 200mm Si wafers
Research and innovation hub in nano-electronics and digital technology, imec, has announced that it has developed 200 and 650V normally-off/enhancement mode (e-mode) on 200mm/8" GaN-on-Silicon wafers, achieving a very low dynamic Ron dispersion (below 20%) and performance and reproducibility. Stress tests have also shown a good device reliability. Imec’s technology is ready for prototyping, customised low-volume production as well as for technology transfer.
21st June 2017

Sub-10nm germanium GAA devices displayed at VLSI Symposia

Sub-10nm germanium GAA devices displayed at VLSI Symposia
New process improvements for next-gen devices were unveiled by imec at 2017 Symposia on VLSI Technology and Circuits. For the first time, scaled strained germanium p-channel Gate-All-Around (GAA) FETs were shown with sub-10nm diameter, integrated on a 300mm platform. In addition, the research centre has obtained a significant improvement in device performance and electrostatic control with high-pressure anneal (HPA) for both strained germanium p-channel FinFET and GAA devices.
12th June 2017

Imec demonstrates breakthrough in ferroelectric memory

Imec demonstrates breakthrough in ferroelectric memory
Imec has announced at the 2017 Symposia on VLSI Technology and Circuits the world’s first demonstration of a vertically stacked ferroelectric Al doped HfO2 device for NAND applications. Using a new material and a novel architecture, imec has created a non-volatile memory concept with attractive characteristics for power consumption, switching speed, scalability and retention.
8th June 2017

Record low source/drain contact resistivity for PMOS transistors

Record low source/drain contact resistivity for PMOS transistors
At this week’s 2017 Symposia on VLSI Technology and Circuits taking place in Japan, imec, the research and innovation hub in nano-electronics and digital technology, reported record breaking values below 10-9Ω/cm2 for PMOS source/drain contact resistivity. These results were obtained through shallow Gallium implantation on p-SiliconGermanium (p-SiGe) source/drain contacts with subsequent pulsed nanosecond laser anneal.
8th June 2017

Pre-bond testing development hikes 3D chip yields

Pre-bond testing development hikes 3D chip yields
A fully-automatic system for pre-bond testing of advanced 3D chips has been developed by Imec, the research and innovation hub in nano-electronics and digital technologies, and Cascade Microtech, a leader in advanced wafer-probe solutions. The successful development of Pre-bond testing is important to increase the yield of 3D stacked chips.
30th May 2017

n-PERT solar cell has record 22.8% front-side efficiency

Imec and partner in EnergyVille announced it has realised bifacial n-PERT solar cells using an industrially-compatible process with a record-setting front-side conversion efficiency of 22.8%. Used bifacially under standard front illuminations conditions in conjunction with an additional 0.15 sun rear illumination, these cells can produce the equivalent energy of 26.2% monofacial cells.
18th April 2017

Meet Walt, the cobot helping coworkers keep safe

Meet Walt, the cobot helping coworkers keep safe
A new approach to human-robot interaction in industrial environments has been presented by imec, Vrije Universiteit Brussel (VUB), University of Hasselt and five industry partners. Introducing new adaptive control software and using gestures to improve human-machine communication, Walt, a collaborative robot (cobot) has been developed that works alongside its human co-workers in a safe and flexible way. Audi Brussels, one of the project partners, is already using ‘Walt’ at its production lines.
30th March 2017

An alternative to MOSFETs on show at CS International

Currently taking place in Brussels, at the CS International Conference imec will present promising device results with a InGaAs-only TFET (Tunnel Field-Effect Transistor). Achieving a sub-60 mV/decade sub-threshold swing at room temperature, these devices are promising candidates to replace MOSFET transistors in future chip generations for low-power applications operating on low supply voltages.
7th March 2017

Flemish government supports local innovation

Flemish government supports local innovation
  The research and innovation hub in nanoelectronics and digital technology, imec, and the Flemish government have announced a five year strategic commitment that aims at strengthening the pioneering role of Flanders’ research hub. 
22nd February 2017

Solid-state multi-ion sensor aids IoT applications

Solid-state multi-ion sensor aids IoT applications
At IEEE International Electron Devices Meeting (IEDM) in San Francisco, imec debuted a miniaturised sensor that simultaneously determines pH and chloride (Cl-)levels in fluid. This innovation is a must have for accurate long-term measurement of ion concentrations in applications such as environmental monitoring, precision agriculture and diagnostics for personalised healthcare.
13th December 2016

3D-Compatible Germanium nMOS Gate stack has high mobility

At this week’s IEEE IEDM conference, imec, the world-leading research and innovation hub in nano-electronics and digital technologies showed for the first time a silicon (Si)-passivated germanium (Ge) nMOS gate stack with dramatically reduced interface defect density (DIT) reaching the same level as a Si gate stack and with high mobility and reduced positive bias temperature instability (PBTI).
8th December 2016


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