Hamamatsu introduces the new C11440-50B board level camera for OEM scientific and industrial customers. It has a unique scientific CMOS sensor and is designed to deliver high performance and cost-effective imaging in a small, board-level format.

Hamamatsu introduces the new C11440-50B board level camera for OEM scientific and industrial customers. It has a unique scientific CMOS sensor and is designed to deliver high performance and cost-effective imaging in a small, board-level format.

Hamamatsu Photonics introduced a hybrid photodetector module, the H10777. The hybrid photodetector (HPD) dispenses with the traditional metal dynodes found within a conventional photomultiplier tube (PMT) and instead photoelectrons are accelerated in a high electric field onto a silicon avalanche diode target, which is connected to form the cathode/output of the device.

Hamamatsu Photonics introduced a hybrid photodetector module, the H10777. The hybrid photodetector (HPD) dispenses with the traditional metal dynodes found within a conventional photomultiplier tube (PMT) and instead photoelectrons are accelerated in a high electric field onto a silicon avalanche diode target, which is connected to form the cathode/output of the device.

Hamamatsu Photonics just introduced the newest member of its TG series of mini-spectrometers, the C11118GA. The new TG NIR spectrometer module expands on the existing Hamamatsu range and adopts a high sensitivity, low noise InGaAs image sensor, specially selected to match the optical arrangement. The C11118GA is optimised for NIR operation and works in the 0.9 µm to 2.55 µm waveband. This new module provides higher sensitivity and the furthest ...

Hamamatsu Photonics just introduced the newest member of its TG series of mini-spectrometers, the C11118GA. The new TG NIR spectrometer module expands on the existing Hamamatsu range and adopts a high sensitivity, low noise InGaAs image sensor, specially selected to match the optical arrangement. The C11118GA is optimised for NIR operation and works in the 0.9 µm to 2.55 µm waveband. This new module provides higher sensitivity and the furthest ...

Hamamatsu Photonics introduce a new range of silicon detectors and image sensors that offer enhanced near-infrared sensitivity. Using unique laser processing technology, MEMS structures can be fabricated on the silicon surface which act to reduce reflections and increase the surface area of the active element. This process drastically increases the sensitivity in wavelengths longer than 800nm.

Hamamatsu Photonics introduce a new range of silicon detectors and image sensors that offer enhanced near-infrared sensitivity. Using unique laser processing technology, MEMS structures can be fabricated on the silicon surface which act to reduce reflections and increase the surface area of the active element. This process drastically increases the sensitivity in wavelengths longer than 800nm.

Hamamatsu Photonics introduce the new InGaAs camera, the C10633, which features spectral sensitivity in the infrared region from 900 nm to 1700 nm. With excellent quantum efficiency, more than 80% at 1500nm, it provides superior imaging quality and offers high QE, greater than 50%, in the visible region.

Hamamatsu Photonics introduce the new InGaAs camera, the C10633, which features spectral sensitivity in the infrared region from 900 nm to 1700 nm. With excellent quantum efficiency, more than 80% at 1500nm, it provides superior imaging quality and offers high QE, greater than 50%, in the visible region.

Hamamatsu Photonics introduce the new C10800 series of “Dual Energy” X-ray Line Scan Cameras, specifically designed for imaging materials and objects requiring improved detection and composition classification.

Hamamatsu Photonics introduced the new C11208 MPPC module which integrates the S11028 series MPPC, a pixelated silicon avalanche photodiode operated in Geiger-mode, with the addition of a high performance thermoelectric cooler. Along with the TE cooled MPPC, the module houses a current-to-voltage converter, high speed comparator, high voltage power supply circuit, temperature control and counting circuits as well as a micro controller.

Since 1993 Hamamatsu Photonics have offered a wide range of CMOS linear image sensors for use in analytical instruments such as spectrophotometers and industrial process monitoring equipment. A new range of CMOS linear image sensors has recently been developed, which offer very high-speed response whilst maintaining high resolution.

Since 1993 Hamamatsu Photonics have offered a wide range of CMOS linear image sensors for use in analytical instruments such as spectrophotometers and industrial process monitoring equipment. A new range of CMOS linear image sensors has recently been developed, which offer very high-speed response whilst maintaining high resolution.

Hamamatsu Photonics introduced the G11097-0606S, a brand new two dimensional InGaAs image sensor that compliments the existing range of high performance linear image sensors. The G11097-0606S consists of a CMOS readout integrated circuit (ROIC) and a back illuminated InGaAs photodiode array, which are connected via indium bumps on a hybrid structure. The G11097-0606S features simultaneous charge integration and a 5MHz video data rate. Also includ...

Hamamatsu Photonics introduced the G11097-0606S, a brand new two dimensional InGaAs image sensor that compliments the existing range of high performance linear image sensors. The G11097-0606S consists of a CMOS readout integrated circuit (ROIC) and a back illuminated InGaAs photodiode array, which are connected via indium bumps on a hybrid structure. The G11097-0606S features simultaneous charge integration and a 5MHz video data rate. Also includ...

Hamamatsu Photonics introduce the S11108 CMOS linear image sensor with APS (Active Pixel Sensor) technology. The latest APS technology allows the S11108 to achieve a combination of a very high sensitivity, at 50 V/(lx•s) together with a high speed video data rate of 10 MHz. This is accomplished by simultaneously integrating charge for all pixels and allows the S11108 to offer comparable sensitivity to high performance linear CCD sensors.

Hamamatsu Photonics introduce the S11108 CMOS linear image sensor with APS (Active Pixel Sensor) technology. The latest APS technology allows the S11108 to achieve a combination of a very high sensitivity, at 50 V/(lx•s) together with a high speed video data rate of 10 MHz. This is accomplished by simultaneously integrating charge for all pixels and allows the S11108 to offer comparable sensitivity to high performance linear CCD sensors.

Hamamatsu Photonics introduce a new design of back-thinned linear CCD image sensor. The S11155-2048 and S11156-2048 utilise a resistive gate structure, with “on chip” electronic shutter function, offering high speed readout with low image lag. With their back-thinned structure these CCDs offer a high sensitivity (> 80 % quantum efficiency) from the UV to the NIR region of the spectrum.

Hamamatsu Photonics introduce a new design of back-thinned linear CCD image sensor. The S11155-2048 and S11156-2048 utilise a resistive gate structure, with “on chip” electronic shutter function, offering high speed readout with low image lag. With their back-thinned structure these CCDs offer a high sensitivity (> 80 % quantum efficiency) from the UV to the NIR region of the spectrum.