CEA-Leti research scientists have demonstrated that electrons and other charge carriers can move faster in germanium tin than in silicon or germanium, enabling lower operation voltages and smaller footprints in vertical than in planar devices.

CEA, a technology-research organisation, and Astrocast, a leading global satellite Internet of Things network operator, have announced their successful collaboration on a low-cost, bidirectional communication module that enables corporations to communicate with their remote assets in areas not covered by terrestrial networks.

Inspired by the barn owl’s neuroanatomy, CEA-Leti has developed an event-driven, object-localisation system that couples state-of-the-art piezoelectric, ultrasound transducer sensors to a neuromorphic, resistive memories-based computational map.

In a breakthrough for the future of die-to-wafer (D2W) bonding, CEA-Leti and Intel have optimised a hybrid direct-bonding, self-assembly process that has the potential to increase the alignment accuracy as well as fabrication throughput by several thousand dies per hour.

Anticipating that 6G systems will offer a major step change in performance from gigabit towards terabit capacities and sub-millisecond response times, the top two European conferences for communication networks will meet June 7-10 to explore future critical 6G applications.

CEA and C12 Quantum Electronics, a start-up focused on developing the next-generation of quantum computers using carbon nanotubes have announced a partnership to produce the first multi-qubit chips at wafer scale.

CEA-Leti, a CEA microelectronics research institute, will introduce a smart, integrated multi-sensor system for knee implants at CES 2022 that can help surgeons more accurately position the implant, dramatically reduce risk of follow-up surgery, and enhance rehabilitation.

CEA-Leti has reported the world’s-first demonstration of 16-kbit ferroelectric random-access memory (FeRAM) arrays at the 130nm node that advances this energy-saving technology closer to commercialisation. The breakthrough includes back-end-of-line (BEOL) integration of TiN/HfO2:Si/TiN ferroelectric capacitors as small as 0.16 µm², and solder reflow compatibility for the first time for this type of memory.

CEA, in collaboration with CNRS Néel, a team in SI-based quantum computing, presented two papers on that topic at IEDM 2021, including an invited paper that identifies the material and integration challenges facing large-scale Si quantum computing.

CEA-Leti has proposed a “newfangled approach” that allows these devices to operate as energy-storage elements as well as memory, depending on the applied bias.