The high-performance GaN power stage supports higher currents, temperatures, voltages, and switching frequencies than silicon transistors, while reducing switching losses by up to 80%.
The device features an integrated gate driver and robust protection to offer improved performance compared with silicon MOSFETS and integrated-gate bipolar transistors (IGBTs).
It delivers zero common source inductance, a user-adjustable slew rate of 25 to 100V/ns, and a 20ns propagation delay for mHZ operation. The robust IC features over-current protection with greater than 150V/ns slew rate immunity, over-temperature protection, and transient over-voltage immunity, as well as overvoltage lockout protection on all supply rails.
Housed in a compact, 8mm × 8mm QFN package, the power stage requires no external protection components, allowing for simplified design and layout processes.
It is well suited for performance with the KC-LINK surface mount capacitors from KEMET Electronics.
Designed to meet the demands of fast-switching semiconductors like the TI LMG3410R070 IC, the KC-LINK capacitors feature extremely low effective series resistance and thermal resistance, allowing the devices to withstand the stress of high-frequency, high voltage DC link applications.
The power stage is ideal for applications including multi-level converters, solar inverters, high voltage battery chargers, and uninterruptible power supplies.