It is capable of CW or pulse power in narrowband operations.
The new transistor is internally input-matched, can be used single-ended or in a push-pull configuration and is characterised for 30 to 50V.
It is suitable for linear applications with appropriate biasing and includes integrated ESD protection.
The MRF13750H/HS offers ease-of-use to microwave generator designers, delivering precision, control and reliability not available with vacuum tube-era technologies such as magnetrons.
It supports accurate power control over the full dynamic range from 0 to 750W, enabling frequency shifting that helps make precise use of RF energy.
Typical ISM applications for the MRF13750H/HS include 915MHz industrial heating and welding systems and 1300 MHz particle accelerators.
An associated test fixture tuned to 915MHz is available.