These GaN FETs are normally-off devices using Transphorm’s Gen IV platform.
They combine a high voltage GaN HEMT (Gallium Nitride High-Electron-Mobility Transistor) with a low voltage silicon MOSFET.
The Gen IV SuperGaN platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
Applications for the Transphorm 650V 34A GaN FETs include datacom, PV inverters, and servo motors.
