Leveraging and enhancing the previous generation Airfast circuitry, die, matching network and packaging technologies, Airfast technology, now includes RF power LDMOS components which achieve 50% efficiency in a Doherty configuration. 2nd gen Airfast power amplifiers expand the portfolio to include two-stage integrated circuits which incorporate multiple gain stages in a single package and products based on GaN and 48V LDMOS process technology.
The A2T07H310-24S is 300W asymmetrical Doherty transistor targeting wireless infrastructure applications in the 720-960MHz frequency band. Offered in an NI-1230S-4L2L package, this device breaks the 50% efficiency barrier at 8dB back-off with 55dBm peak power and 18.9dB gain.
The A2T07D160W04S 160W dual-path transistor has been designed for wireless infrastructure applications in the 728-960MHz frequency band. In Doherty configuration, it offers 51% efficiency at 7dB output back-off with 52.5dBm peak power and over 21.5dB of gain in an NI-780S-4L package.
Supplied in an NI-780S-4L2L package, the A2T26H160-24S 160W RF asymmetrical Doherty transistor provides 47% efficiency at 8dB back-off with 52.5dBm peak power and 15.7dB gain. It is suited for wireless infrastructure applications in the 2496-2690MHz frequency band.
Suitable wireless infrastructure applications in the 2300-2690MHz frequency band, the A2I25D012N is a 12W RF integrated circuit. In Doherty configuration, this device provides 41% efficiency at 8dB output back-off with 43.5dBm peak power and 29dB gain. It is available in a TO-270WB-15 plastic package.
A 50W RF integrated circuit for wireless infrastructure applications in the 2000-2200MHz frequency band, the A2I22D050N has 42% efficiency at 8dB output back-off with 49dBm peak power and 28dB gain in Doherty configuration. It is offered in a TO-270WB-15 plastic package.
Freescale also provides application-specific reference designs to give customers a head start in designing and developing common systems with configuration and development instructions.