Featuring a footprint of just 4mm², the new PQFN2x2 devices, which are available in 20 V, 25 V and 30 V with standard or logic level gate drive, utilize IR’s latest low voltage N-Channel and P-Channel silicon technologies to offer very low on-resistance (RDS(on)), and high power density in line with a PQFN3.3×3.3 or PQFN5x6 package.
IR’s new PQFN2x2 devices further expand IR’s broad portfolio of power MOSFETs and fulfill our customers’ requirements to further miniaturize package size while incorporating benchmark silicon. Offering ultra-compact size and high density, these new devices are ideally suited to applications featuring a high digital content,” said Stéphane Ernoux, director, IR’s Power Management Devices Business Unit.
The PQFN2x2 family includes P-Channel devices optimized for use in the high-side of load switches, providing a simpler drive solution. Featuring a low profile of less than 1 mm, the devices are compatible with existing Surface Mount Techniques, feature industry-standard footprint and are RoHS compliant.
