Vishay Siliconix 8 V P-Channel TrenchFET Power MOSFET Offers Industry's Lowest On-Resistance Down to 34 mΩ at 4.5 V in the 1.6 mm by 1.6 mm Footprint Area With Sub-0.8-mm Profile
Vishay has introduced a new 8 V p-channel TrenchFET power MOSFET featuring the industry's lowest on-resistance for a p-channel device in the 1.6 mm by 1.6 mm footprint area with a profile under 0.8 mm. In addition, the SiB437EDKT is the only such device to offer an on-resistance rating down to 1.2 V.SiB4
The new SiB437EDKT will be used for load switching in handheld devices such as smart phones, MP3 players, portable media players, digital cameras, eBooks, and tablet PCs. The compact footprint and ultra-thin 0.65 mm maximum profile of the device's thermally enhanced Thin PowerPAK® SC-75 package enable smaller, slimmer end products, while its low on-resistance translates into lower conduction losses, saving power and maximizing battery run times in these devices.
The MOSFET's on-resistance ratings of 1.5 V and 1.2 V allow the device to work with the lower-voltage gate drives and lower bus voltages common in handheld devices, without the space and cost of level-shifting circuitry. The MOSFET is particularly useful when the battery charge in a handheld device is low and needs to consume as little power as possible.
The SiB437EDKT offers an ultra-low on-resistance of 34 mΩ at 4.5 V, 63 mΩ at 1.8 V, 84 mΩ at 1.5 V, and 180 mΩ at 1.2 V. The closest competing p-channel devices in the 1.6 mm by 1.6 mm footprint area with a sub-0.8 mm profile feature on-resistance of 37 mΩ at 4.5 V, 65 mΩ at 1.8 V, and 100 mΩ at 1.5 V. These values are 8 %, 5 %, and 16 % higher, respectively, than the SiB437EDKT.
100 % Rg tested, the SiB437EDKT is halogen-free in accordance with the IEC 61249-2-21 definition and compliant to RoHS Directive 2002/95/EC. The MOSFET offers typical ESD protection of 2000 V.