Vishay 30V N-channel MOSFET with source flip technology

Featuring source flip technology in the 3.3mm x 3.3mm PowerPAK 1212-F package, the Vishay Siliconix SiSD5300DN provides best in class on-resistance of 0.71mΩ at 10V and on-resistance times gate charge – a critical figure of merit (FOM) for MOSFETs used in switching applications – of 42 mΩ*nC.

Occupying the same footprint as the PowerPAK 1212-8S, the device offers 18% lower on-resistance to increase power density, while its source flip technology reduces thermal resistance by 63°C/W to 56°C/W. In addition, the SiSD5300DN's FOM represents a 35% improvement over previous-generation devices, which translates into reduced conduction and switching losses to save energy in power conversion applications.

PowerPAK 1212-F source flip technology reverses the usual proportions of the ground and source pads, extending the area of the ground pad to provide a more efficient thermal dissipation path and thus promoting cooler operation. At the same time, the PowerPAK 1212-F minimises the extent of the switching area, which helps to reduce the impact of trace noise. In the PowerPAK 1212-F package specifically, the source pad dimension increases by a factor of 10, from 0.36mm² to 4.13mm², enabling a commensurate improvement in thermal performance. The PowerPAK 1212-F's centre gate design also simplifies parallelisation of multiple devices on a single-layer PCB.

The source flip PowerPAK 1212-F package of the SiSD5300DN is especially suitable for applications such as secondary rectification, active clamp battery management systems (BMS), buck and BLDC converters, OR-ing FETs, motor drives, and load switches. Typical end products include welding equipment and power tools; servers, edge devices, supercomputers, and tablets; lawnmowers and cleaning robots; and radio base stations.

The device is 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free.

Samples and production quantities of the SiSD5300DN are available now, with lead times of 26 weeks.