Pulsiv release efficient 65W USB-C design
Pulsiv has unveiled a 65W USB-C GaN optimised reference design, which claims to be among the world’s most efficient. This design, known as the PSV-RDAD-65USB, is crafted to address the significant thermal challenges in power supply units, promising to set new standards in USB-C fast charging technology with its unique features. (Read more.)
Nexperia’s NextPower 80/100V MOSFETs boost design flexibility
Nexperia has announced that the ongoing expansion of its NextPower 80V and 100V MOSFET portfolio is continuing apace with the release of several new LFPAK devices in industry-standard 5 x 6mm and 8 x 8mm footprints. (Read more.)
LMG2100R044 from Texas Instruments
The LMG2100R044 device is a 90V continuous, 100V pulsed, 35A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. (Read more.)
Navitas’ new Gen-3 ‘Fast’ SiC in robust TOLL package
Navitas Semiconductor has extended its new portfolio of Gen-3 ‘Fast’ (G3F) 650 V SiC MOSFETs into a thermally-enhanced, rugged, high-speed, surface-mount TOLL (Transistor Outline Leadless) package designed for demanding, high-power, high-reliability applications. (Read more.)
Infineon introduces new CoolGaN Drive product family
Infineon has expanded its GaN portfolio with the CoolGaN Drive product family of integrated single switches and half-bridges with integrated drivers. It consists of the CoolGaN Drive 700 V G5 single switches, integrating one transistor plus gate driver in PQFN 5×6 and PQFN 6×8 packages, as well as the CoolGaN Drive HB 600 V G5 devices, combining two transistors with integrated high- and low-side gate drivers in a LGA 6×8 package. (Read more.)
