STMicroelectronics enhances MasterGaN range with 200W and 500W models
STMicroelectronics has announced the addition of MasterGaN1L and MasterGaN4L to its product line, representing the latest in its integrated gallium-nitride (GaN) bridge devices. These devices mark a significant leap in simplifying power-supply design, utilising wide-bandgap technology to meet contemporary ecodesign standards.
The MasterGaN series from STMicroelectronics ingeniously merges 650V GaN high electron-mobility transistors (HEMTs) with tailored gate drivers and system protection, along with an integrated bootstrap diode critical for device startup. This integration relieves designers from the complexities of GaN transistors' gate-drive requirements. Additionally, their compact power package bolsters reliability, reduces the bill of materials, and simplifies circuit layout.
MasterGaN1L and MasterGaN4L feature two GaN HEMTs in a half-bridge arrangement, ideal for crafting switched-mode power supplies, adapters, and chargers employing active-clamp flyback, forward, and resonant converter topologies. These new devices are pin-compatible with their predecessors, MasterGaN1 and MasterGaN4, and offer an optimised turn-on delay for higher frequency and efficiency in resonant topologies, particularly under low-load conditions.
With input signal voltage acceptance ranging from 3.3V to 15V, complete with hysteresis and pull-down, these devices easily connect to controllers such as microcontrollers, DSPs, or Hall-effect sensors. A dedicated shutdown pin allows for efficient system power management. The two GaN HEMTs are precisely timed with an interlocking circuit to avoid cross-conduction scenarios.
The MasterGaN1L HEMTs, characterised by a 150mΩ RDS(on) and 10A rated current, are designed for applications up to 500W. They demonstrate minimal no-load power consumption of just 20mW and high conversion efficiency, enabling designers to meet ambitious industry standards for standby power and average efficiency. The MasterGaN4L HEMTs cater to applications up to 200W, with 225mΩ RDS(on) and a rated current of 6.5A.
To assist in evaluating each device, STMicroelectronics offers the EVLMG1LPBRDR1 and EVLMG4LPWRBR1 demonstration boards. These boards feature a GaN-based half-bridge power module, optimised for LLC applications, and facilitate the exploration of new topologies using the MasterGaN1L and MasterGaN4L devices without the necessity for complete PCB design.
Both MasterGaN1L and MasterGaN4L are currently in production, available in a 9mm x 9mm x 1mm GQFN package. Pricing starts from £4.40 for the MasterGaN1L and £3.78 for the MasterGaN4L, offering cost-effective solutions for advanced power supply designs.