The power performance and compact and lightweight construction of the PTS10147 has been achieved by employing gallium nitrate (GaN) high power transistors in the output and driver stages. Furthermore, this design provides the benefit of a power-to-volume ratio that is probably the highest on the market for such a product.
Designed with demanding electronic warfare (EW) applications in mind, the PTS10147 is particularly effective in electronic attack (jamming) roles – enabling defence customers to experience the full benefit of wideband, solid state power amplifier technology.
Moreover, its small size and weight – combined with high power – means that it is suited in radar or EW installations used in UAVs, drones, or man-portable systems. The PTS10147 is flexible in layout and architecture, and both electrical and mechanical interfaces can be tailored to meet individual customer specification requirements.
The amplifier is normally supplied without a heat sink or any thermal management assembly. However, TMD can supply tailored heat sinks customised to suit specific requirements. The weight of the PTS10147 is just 0.75kg nominal, with a small size of 137x120x24mm (excluding connectors).
The wide operating temperature is from -40 to +60oC. Prime power is 28V d.c.