Power

SiC Schottky diodes deliver 50% increase in current density

11th May 2016
Nat Bowers

 

Based on the company’s 2nd gen SiC semiconductor technology, Toshiba Electronics Europe has introduced Schottky Barrier Diodes (SBDs) which deliver current densities up to 50% higher than previous-gen devices and can handle significantly higher forward surge currents.

Use of SiC semiconductors helps designers to improve efficiency, reduce heat dissipation and save space in high-speed power switching designs. SiC power devices also offer stable operation over a wider temperature range than silicon alternatives - even at high voltages and currents.

With its 2nd gen SiC process, Toshiba has been able to reduce die thickness to develop SBDs with current densities around 1.5 times higher than 1st gen devices. In addition, the second generation SiC SBDs will offer higher non-repetitive forward surge current (IFSM) ratings.

The first products in the 2nd gen line-up will be 650V devices with current ratings of 4A (TRS4E65F), 6A (TRS6E65F), 8A (TRS8E65F) and 10A (TRS10E65F) in TO-220 2-pin and TO-220 isolated 2-pin packages named TRS..A65F. These diodes will be suited for high-speed switching power conversion designs including PFC schemes, PV inverters and UPS. Toshiba’s SiC SBDs can also be used to improve the efficiency of switching power supplies through the replacement of conventional silicon diodes.

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