Rutronik adds XSemi power MOSFETs from YAGEO to its range

The Rutronik portfolio for power transistors includes the power MOSFETs from YAGEO XSemi. They are characterised by low on-resistance and high switching speeds for various applications, including analog and digital circuits.

In addition to their efficiency and cost-effectiveness, the XSemi series offers a variety of package options to help developers meet individual application requirements. It is widely used for commercial and industrial surface mount applications. YAGEO power MOSFETs are available as high voltage and low voltage options at Rutronik.

With the XSemi power MOSFETs, as well as a wide range of MOSFETs that are widely used and proven in AC/DC and DC/DC applications, YAGEO offers cost-effective and alternative components for almost every requirement. At the same time, the manufacturer has a broad portfolio of passive components to meet customer needs. Based on a ‘fabless’ business model with a world-class supply chain, YAGEO has already delivered 33 billion high-quality components to customers in a range of market segments over the past 25 years.

Specifications of the channel types

N-Channel:

  • 20V to 700V drain-source voltage
  • Up to 300A leakage current, VGS at 10 V4

P-Channel

  • 20V to 700V drain-source voltage
  • Up to 300A leakage current

Dual N-Channel

  • 100V drain-source voltage
  • Up to 2.1A leakage current

Asymmetrical N-Channel

  • 30V drain-source voltage
  • Up to 85A leakage current

Complementary N- and P-Channel

  • 16V, 30V, and 100V drain-source voltage
  • Up to 12A leakage current

Further features

  • SMD packages (TO-22, -25, -26, and SOT-23)
  • RoHS compliant and halogen-free
  • Low gate charge
  • Maximum operating temperature of +150°C

Example applications

  • Low-voltage applications
  • Switching power supplies
  • Surface-mount commercial and industrial applications
  • Telecommunication systems
  • Consumer electronics

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