Renesas release new automotive IPD
Renesas Electronics Corporation announced a new automotive Intelligent Power Device (IPD) that they assert will safely and flexibly control power distribution within vehicles, addressing the requirements of next-generation E/E (electrical/electronic) architectures.
The new RAJ2810024H12HPD is available in the TO-252-7 package and reduces the mounting area by about 40% compared to the conventional TO-263 package product. In addition, the advanced current detection function of the new device intends to give highly accurate detection of abnormal currents such as overcurrent. The IPD is designed to detect abnormal currents even at low loads so engineers can design highly safe and precise power control systems that can detect even the smallest abnormalities. optimizing this.
"We are very pleased to launch a new generation of automotive IPDs featuring our new power MOSFET process," said Akira Omichi, Vice President of Renesas' Automotive Analog Application Specific Business Division. "Renesas will continue to develop IPDs that improve the safety and reliability of power supply systems and facilitate system development for our customers by offering system-level solutions with our microcontrollers."
The new IPD was developed to address the growing requirements as E/E architectures continue to evolve. In a conventional distributed E/E architecture, power supply from the battery is distributed to each Electronic Control Unit via long, thick wires from a power box consisting of mechanical relays and fuses. IPDs have a longer life and are maintenance-free compared to mechanical relays, so they can be placed anywhere in the vehicle, Renesas assert. As the automotive industry moves toward centralised or zone-oriented E/E architectures, IPDs are becoming an ideal choice for building efficient and flexible power supply networks since they use shorter, thinner wires, Renesas conclude.
Key claims of the new IPD (RAJ2810024H12HPD)
- Single-channel high-side IPD
- Small TO-252-7 package (6.10x6.50mm: excluding pins)
- Low on-resistance (Ron) of 2.3mΩ at 25°C (typ.)
- Highly accurate current detection at low loads
- Built-in charge pump
- Self-diagnostic feedback by load current sense
- Protection functions such as load short-circuit, overheat detection, sense current output, and GND open protection
- Supports 3.3V/5V logic interface
- Low standby current
- Battery reverse connection protection with self-turn-on
- Compliant with AEC-Q100 and RoHS automotive standards
Product Spotlight
APV1111GVY
Panasonic
Panasonic PhotoMOS® Photovoltaic MOSFET High-Power Drivers
| SKU: | |
|---|---|
| Stock: | 3490 |
| Cost: | $3.95 |
