Power MOSFETs optimised for low voltage operation

30th October 2008

ES Admin

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Diodes Incorporated has announced an expansion of its power MOSFET product range with the introduction of new devices suitable for load and switching functions in a variety of consumer, communication, computing and industrial applications. Covering both its Diodes and Zetex product lines, the additions include twenty seven 30V logic level and nine 20V low threshold N, P and complementary MOSFETs in a choice of industry standard packages.

Offered in SOT323, SOT23, SOT26 and SO8 formats, all power MOSFETs are pin and footprint compatible with existing devices and provide a competitive price-performance ratio, enabling either a reduction in BOM or improved performance at no extra cost. For DC/DC conversion and general power management duties, these latest MOSFETs will benefit a diverse range of new product designs including LCD TVs and notebook computers.

Diodes’ 30V logic level power MOSFETs cover an on-resistance range from 190mΩ at 10V VGS for a SOT23 P-channel, through to 9mΩ at 10V VGS for an SO8 N-channel MOSFET. On resistance of these devices is also specified at 4.5V VGS for logic level operation. The turn on gate threshold voltage for the P- and N-channel device is -1V and +1V respectively.

The 20V low threshold MOSFET introductions have on resistances specified at 2.5V VGS and 1.8V VGS, being typically 240mΩ in the SOT23 package through to 9mΩ in an SO8. The turn on gate threshold voltage for the P- and N-channel device is -0.6V and +0.6V respectively.