Power MOSFETs from Toshiba

22nd September 2008

Toshiba

ES Admin

0 0

Datasheet

Toshiba Electronics Europe (TEE) has announced the first products from its new DTMOS II family of rugged, high-efficiency, high-speed power MOSFETs. The new 600V power MOSFETs combine a very low on resistance (RDS(on)) and reduced gate charge (Qg) to deliver an RDS(on) x Qg ‘figure of merit’ that is 15% lower than the company’s existing DTMOS I range and 68% lower than conventional MOSFET s.

Featuring 20A (TK20A60U), 15A (TK15A60U) and 12A (TK12A60U) current ratings, the three new DTMOS II power MOSFETs are ideal for switch mode power supplies, lighting ballasts, motor drives and other applications requiring high efficiency, high-speed switching. Respective RDS(on) and Qg ratings of 0.19Ω and 27nC, 0.3Ω and 17nC, and 0.4Ω and 14nC mean that the devices have the industry’s lowest ‘Qg * RDS(on)’ at comparable Current class.

All of the new devices are supplied in the compact TO220SIS ‘smart isolation’ package that offers full pin compatibility with existing TO-220 devices, while delivering a 13.5% reduction in PCB mounting height. This package uses copper connections rather than aluminium bonding wires, which leads to improved current and lower resistance ratings and aids heat dissipation.

The new DTMOS II family brings together the latest version of Toshiba’s Super Junction MOSFET technology with the company’s optimised cell design. The result is a range of devices that combine minimised on resistance and gate charge – a key factor in switching speed – with high levels of ruggedness. All of the new MOSFETs, for example, provide industry-leading avalanche durability and reverse recovery characteristics.

Toshiba is planning to make further DTMOS II announcements in the near future, including the launch of devices in TO220W, TO-3P(N) and TFP (SMD) packages.