Power

PCIM Europe: Power MOSFETs Provide High Blocking Voltage

14th May 2013
ES Admin
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Advanced Power Electronics announced three new high voltage MOSFETs – AP11S60-HF-3, AP14S50-HF-3 and AP20S60-HF-3 – that offer improved on-resistance and gate charge to provide low conduction and switching losses, making switching applications more efficient. The devices are the first in a series of competitively-priced parts that will be introduced by the company and feature RDS(ON) as low as 0.19Ω (AP20S60-HF-3)
Advanced Power Electronics announced three new high voltage MOSFETs – AP11S60-HF-3, AP14S50-HF-3 and AP20S60-HF-3 – that offer improved on-resistance and gate charge to provide low conduction and switching losses, making switching applications more efficient.

The devices are the first in a series of competitively-priced parts that will be introduced by the company and feature RDS(ON) as low as 0.19Ω (AP20S60-HF-3). All three parts are specially designed as main switching devices for universal 90 to 265VAC converter designs. Devices are available in the widely-preferred TO-220CFM isolated through-hole package, with a high isolation capability and low thermal resistance between the tab and the external heat-sink.

Comments Ralph Waggitt, President/CEO, Advanced Power Electronics Corp. (USA): “Our new MOSFETs have been produced to meet industry-demands for higher performance parts which enable very efficient AC-DC conversion. They provide a high blocking voltage to withstand voltage surges in demanding power systems, and can be used in applications such as PFC correction and PWM stages in servers, telecom rectifiers, PCs, gaming consoles and lighting systems.

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