New 40V GaN power transistor from EPC

With RDS(on) x QG figure of merit (10mΩ·nC), zero reverse recovery, and excellent thermal performance, the EPC2366 delivers higher efficiency, faster switching, and greater power density in a compact 3.3 x 2.6mm PQFN package. The EPC2366 enables higher frequency operation and reduced system size for high density 48V converters in AI servers and datacom, high frequency synchronous rectifiers, and 24V battery powered motor drives.

“With the EPC2366, and upcoming lower voltage parts, we are expanding the GaN beachhead across low-voltage applications that have long been dominated by silicon,” said Alex Lidow, EPC CEO and Co-Founder.