Power

MOSFET reliably increases power density & reduces cost

2nd June 2015
Siobhan O'Gorman

Setting a new standard in the Power MOSFET market, Infineon Technologies has extended its medium voltage MOSFET portfolio with OptiMOS 300V. The device helps system designers to increase power density and reduce cost with the highest level of reliability. Ultimately, for the end user, this translates into energy cost savings.

For example, in hard switching applications such as AC/DC converters, the MOSFET cuts energy losses by 50%. This allows for higher switching frequencies and, consequently, passive component and solution size reduction. Furthermore, OptiMOS 300V can provide voltage spike headroom for better reliability, safety and ease of design in a 60V telecomms rectifier. The number of stages required in cascaded high voltage switch mode power supplies can also be reduced. Additionally, 110VAC UPS can now be realised with the device.

“With 300V blocking capability, Infineon extends the benchmark OptiMOS technology into a so far non-mainstream voltage class to support evolving applications such as multilevel converters,” says Richard Kuncic, Vice President & General Manager, DC/DC, Infineon Technologies. “Due to superior performance of OptiMOS technology and the wide application spectrum, we expect this voltage class to become a new standard in the power MOSFET market.”

Incorporating fast diode technology, OptiMOS 300V offers 70% lower reverse recovery charge Q rr compared to the nearest competitor. This characteristic leads to smooth body diode behaviour and minimises voltage overshoot. In the TO-220 package, the MOSFET provides the industry’s best RDS(ON) with more than 58% lower Figure of Merit when compared to other available products. This translates directly into lower conduction losses and improved overall efficiency in high current applications such as motor control.

OptiMOS 300 V is available in two packages: D 2PAK with RDS(ON) of 40.7mΩ and TO-220 with RDS(ON) of 41mΩ. Both packages are in production.

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