The company’s EZ-GaN technology combines low switching and conduction losses, reducing the overall system energy dissipation up to 50% compared with using conventional silicon-based power conversion designs.
The PQFN products, TPH3002LD and TPH3002LS, are offered in widely-used, low-profile PQFN88 packages and feature 290mΩ RDS(on), 29nC Qrr and low inductance for superior high-frequency switching capability. The PQFN88-packaged “LD” devices also feature a kelvin connection to better isolate the gate circuit from the high-current output circuit to further reduce EMI.
In addition, the TPH3002PD and TPH3002PS TO220-packaged 600V GaN HEMTs have been released for use in smaller, lower power applications such as adapters and all-in-one computer power supplies. These devices also feature 290mΩ RDS(on), 29nC Qrr and high- frequency switching capability.
“Every year since 2011 we have announced new advancements of our GaN technology at this major tradeshow – and this year is no exception,” said Primit Parikh, President of Transphorm. “Now by introducing the industry’s first qualified 600V GaN PQFN-packaged products, we have increased the types of applications where GaN can enable dramatically more efficient, compact and low-cost solutions. This dispels the widespread misconception that GaN isn’t ready for prime-time. Once again we’ve shown GaN products are available today and are actually being used in a multitude of real-world applications.”
The TO220-packaged TPH3002PD and TPH3002PS and the PQFN-packaged TPH3002LD and TPH3002LS are available for sale to qualified customers worldwide. Additionally, evaluation boards are available with the 600V TO220 GaN HEMT devices in configurations for LLC DC/DC converter, totem-pole PFC and all-in-one power supply.