Infineon’s first 15V trench power MOSFETs with OptiMOS 7 technology

29th November 2023
Sheryl Miles

The growing power demand in data centres and computing applications necessitates advancements in power efficiency and compact power supply design.

Infineon Technologies AG has responded to system-level trends by launching its new OptiMOS 7 family, the first 15V trench power MOSFET technology. The OptiMOS 7 15V series is primarily designed for optimised DC/DC conversion in servers, computing, data centre, and artificial intelligence applications.

The product range includes the latest PQFN 3.3 x 3.3mm² Source-Down, with bottom- and dual-side cooling variants in standard- and centre-gate footprints. It also features a robust PQFN 2 x 2mm² variant with a reinforced clip. The OptiMOS 7 15V technology is specifically developed for DC/DC conversions with low output voltages, especially in server and computing environments. This innovation is in line with the emerging trends towards high ratio DC/DC conversion in data centre power distribution.

In comparison to the established OptiMOS5 25V, the new OptiMOS 7 15V achieves a ~30% reduction in R DS(on) and FOMQ g, and a ~50% reduction in FOMQ OSS by lowering the breakdown voltage. The PQFN 3.3 x 3.3mm² Source-Down package variants offer a more versatile and efficient PCB design. Additionally, the PQFN 2 x 2mm² package provides a pulsed current capability higher than 500A and a typical R thJC of 1.6K/W. By minimising conduction and switching losses and incorporating advanced packaging technology, thermal management becomes straightforward and efficient, establishing new standards for power density and overall efficiency.

Availability The OptiMOS 7 15V product portfolio is now available for order and comes in two package sizes: PQFN 3.3 x 3.3mm² Source-Down variants and PQFN 2 x 2mm².


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