ICeGaN GaN power ICs enable high efficiency levels for data centres

11th June 2024
Paige West

Cambridge GaN Devices (CGD) has launched its lowest ever on-resistance (RDS(on)) parts.

These new components, engineered with a new die and innovative packages, bring the benefits of GaN to high-power applications such as data centres, inverters, motor drives, and other industrial power supplies. The new ICeGaN P2 series ICs feature RDS(on) levels down to 25mΩ, supporting multi-kilowatt power levels with the highest efficiency.

Andrea Bricconi, Chief Commercial Officer, CGD said: “The explosive growth of AI is leading to a significant increase in energy consumption, prompting data centre systems designers to prioritise the use of GaN for high-power, efficient power solutions. This new series of Power GaN ICs is a stepping stone for CGD to support our customers and partners by achieving and exceeding 100kW/rack power density in data centres, required by most recent TDP (Thermal Design Power) trends for high-density computing. Turning to motor control inverters, developers are looking to GaN to reduce heat for smaller, longer-lasting system power. These are just two examples of markets that CGD is now aggressively targeting with these new high-power ICeGaN ICs. Simplified gate driver design and reduced system costs, combined with advanced high-performance packaging, make P2 series ICs an excellent choice for these applications.”

Cambridge GaN Devices (CGD) has launched its new ICeGaN P2 series ICs, designed to outperform discrete e-Mode GaN and other existing technologies. These ICs incorporate an on-chip Miller Clamp to eliminate shoot-through losses during fast switching and implement 0V turn-off to minimise reverse conduction losses. The new packages provide improved thermal resistance performance as low as 0.28 K/W, equalling or surpassing current market offerings. The dual-gate pinout of the dual-side DHDFN-9-1 (Dual Heat-spreader DFN) package facilitates optimal PCB layout and easy paralleling for scalability, enabling customers to handle multi-kilowatt applications effortlessly. Additionally, the new packages feature wettable flanks to simplify optical inspection, enhancing productivity.

The new P2 Series ICeGaN power ICs are currently available for sampling. The series includes four devices with RDS(on) levels of 25mΩ and 55mΩ, rated at 60A and 27A, respectively, in 10 x 10mm footprint DHDFN-9-1 and BHDFN-9-1 (Bottom Heat-spreader DFN) packages. Like all CGD ICeGaN products, the P2 series can be driven using any standard MOSFET or IGBT driver.

Two demo boards featuring the new P2 devices are available: a single leg of a 3-phase automotive inverter demo board, developed in partnership with the French public R&I institute IFP Energies nouvelles, and a 3kW totem-pole power factor correction demo board.

The new P2 series ICeGaN GaN power ICs and demo boards were unveiled at the PCIM exhibition at CGD’s booth #7 643, Nürnberg Messe, Nuremberg, Germany, from 11th to 13th June 2024.

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