Power

GaN transistor is x20 smaller than silicon option

26th April 2018
Caroline Hayes

 

Efficient Power Conversion (EPC) claims that its 350V eGaN power transistor is 20 times smaller than the comparable silicon. This makes it suitable for use in multi-level converters, for EV charging, solar power inverters and motor drives. 

The EPC2050 is a 350V, maximum RDS on of 65mΩ, 26A pulsed output current power transistor in a small chip-scale package. They are designed for multi-level converter configurations, such as a three-level, 400V input to 48V output LLC converter for telecomms or server power supplies.

The EPC2050 measure 1.95 x 1.95mm. Given its size, an efficient half bridge with gate driver occupies five times less area than a comparable silicon solution,says the company. Despite the size of the chip-scale packaging, the transistor is claimed to handle thermal conditions more efficiently than plastic packaged MOSFETs. “The performance and cost gap of silicon with eGaN technology widens with the 350 V, EPC2050, that is almost 20 times smaller than the closest silicon MOSFET,” said CEO, Alex Lidow.

The EPC9084 development board is a 350V maximum device voltage, half bridge featuring the EPC2050, and the Silicon Labs Si8274GB1-IM gate driver. It measures 51 x 38mm, or 2.0 x 1.5-inches and is designed for optimal switching performance and includes all critical components for evaluation of the 350V eGaN FET.

The FET and development board are available for immediate delivery from Digi-Key.

 

 

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