Four-pin package SiC MOSFETs with lower switching loss

This makes it possible to reduce switching loss by up to 35% over conventional three-pin package types (TO-247N). This contributes to lower power consumption in a variety of applications.

In recent years, the growing needs for cloud services due to the proliferation of AI and IoT has increased the demand for data centres worldwide. But for servers used in data centres, one major challenge is how to reduce power consumption as capacity and performance increase.

At the same time, SiC devices are attracting attention due to their smaller loss over mainstream silicon devices in the power conversion circuits of servers. Furthermore, as the TO-247-4L package enables to reduce switching loss over conventional packages, it is expected to be adopted in high output applications such as servers, base stations, and solar power generation.

In 2015 ROHM became the first supplier to successfully mass-produce trench-type SiC MOSFETs, and continues to lead the industry in product development. In addition to these newest 650V/1200V high efficiency SiC MOSFETs, we are committed to developing innovative devices and propose solutions that contribute to lower power consumption in a variety of devices, including gate driver ICs optimised for SiC drive.

ROHM also proposes solutions that facilitate application evaluation, including an SiC MOSFET evaluation board, P02SCT3040KR-EVK-001, equipped with gate driver ICs (BM6101FV-C) along with multiple power supply ICs and discrete components optimised for SiC device drive.

Key features

Four-pin package reduces switching loss by up to 35%

With conventional three-pin packages (TO-247N), the effective gate voltage at the chip reduces due to the voltage dropped across the parasitic inductance of the source terminal. This causes the switching speed to reduce.

Adopting the four-pin TO-247-4L package separates the driver and power source pins, minimising the effects of the parasitic inductance component. This makes it possible to maximise the switching speed of SiC MOSFETs, reducing total switching loss (turn ON and turn OFF) by up to 35% over conventional package.

The SCT3xxx xR series consists of SiC MOSFETs utilising a trench gate structure. Six models are offered, featuring a breakdown voltage of either 650V (three products) or 1,200V (three products).