This high-performance step-up DC/DC switching regulator controller simplifies the application design while requiring no protection diodes and no other additional external components compared to a silicon metal-oxide-semiconductor field-effect transistor (MOSFET) solution.
The internal smart bootstrap switches prevent overcharging of the BOOST pin to the SW pin high-side driver supply during dead times, thereby protecting the gate of the top GaN FET. The dead times of the LTC7893 can be optimized with external resistors for margin or to tailor the application for higher efficiency, allowing for high-frequency operation.
The gate drive voltage of the LTC7893 can be precisely adjusted from 4 V to 5.5 V to optimize performance and to allow the use of different GaN FETs or even logic-level MOSFETs. When biased from the boost converter regulator output, the LTC7893 can operate from an input supply as low as 1 V after startup.
The EVAL-LTC7893-AZ evaluation circuit features the LTC7893 synchronous boost controller that can be used to drive logic-level silicon FETs for an operational input range of 8 V to 36 V at a 500 kHz switching frequency.
A mode selector allows the EVAL-LTC7893-AZ to operate in forced continuous operation, pulse-skipping, or burst mode operation during light loads.
The device offers a wide VIN range: 4 V to 60 V and operates down to 1 V after startup.
No catch, clamp, or bootstrap diodes are required, and internal smart bootstrap switches prevent overcharging of the high-side driver supplies.
Other features include resistor-adjustable dead times and split output gate drivers for adjustable turn-on and turn-off driver strengths.
Applicationcs cover automotive and industrial power systems, military avionics and medical systems and telecommunications power systems.
These synchronous boost controllers are in stock at authorised distributor DigiKey.
