30V MOSFET adds to efficiency of mobile devices

7th April 2017
Mick Elliott

A new 30V n-channel TrenchFET Gen IV power MOSFET that delivers increased power density and efficiency for mobile devices, consumer electronics, and power supplies has been introduced by Vishay Intertechnology. Offered in the ultra compact PowerPAK SC-70 package, the Vishay Siliconix SiA468DJ provides the industry's lowest on-resistance and highest continuous drain current for 30 V devices in 2 mm by 2 mm plastic packages.

60% smaller than devices in the PowerPAK 1212, the MOSFET released today is one of the most compact 30V solutions available for DC/DC conversion and load switching for battery management in devices such as notebook computers, tablets, VR headsets, and DC-DC bricks; H bridges in wireless chargers; and motor drive control for drones.

To reduce conduction loss and increase efficiency in these applications, the SiA468DJ features extremely low on-resistance of 8.4mΩ at 10V and 11.4mΩ at 4.5V.

These values represent a 51% improvement over previous-generation solutions and a 6% improvement over the closest competing device.

In addition, the MOSFET's low gate charge times on-resistance figure of merit (FOM) is optimised for a diverse range of power conversion topologies.

The SiA468DJ's 37.8 A continuous drain current is 68% higher than previous-generation devices and 50% higher than the closest competing solution.

This high current rating offers an ample safety margin for applications that encounter high transient current.

The MOSFET is 100% RG-tested, RoHS-compliant, and halogen-free.

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