By co-packaging two MOSFETs in an asymmetric package – with a larger low-side MOSFET for lower on-resistance and smaller high-side MOSFET for faster switching – the 12V SQJ202EP and 20V SQJ200EP provide high-performance alternatives to standard dual devices, which restrict the optimum combination of MOSFETs for high-current, high-frequency synchronous buck designs. Compared to using discrete components, the devices occupy less board space and can facilitate more compact PCB layouts.
The devices offer high-temperature operation to +175°C to provide the ruggedness and reliability required for automotive applications such as infotainment, telematics, navigation and LED lighting. The SQJ202EP is well-suited for applications with bus voltages less than or equal to 8V and offers extremely low maximum on-resistance down to 3.3mΩ for the Channel 2 low-side MOSFET. For applications with higher bus voltages, the 20V SQJ200EP features a slightly higher maximum on-resistance of 3.7mΩ. Both parts are 100% tested for gate resistance and avalanche. They are also RoHS-compliant and halogen-free.
Samples and production quantities of the SQJ200EP and SQJ202EP are available now, with lead times of 12 weeks for large orders.