12 & 20V MOSFETs offered in dual asymmetric package

23rd June 2016
Nat Bowers

Vishay Intertechnology has announced what it claims to be the industry's first AEC-Q101-qualified 12 and 20V MOSFETs in a dual asymmetric power package. To save space and power in high-efficiency synchronous buck converters for automotive applications, the SQJ202EP and SQJ200EP n-channel TrenchFET devices each combine a high- and low-side MOSFET in the compact 5x6mm PowerPAK SO-8L dual asymmetric package.

By co-packaging two MOSFETs in an asymmetric package - with a larger low-side MOSFET for lower on-resistance and smaller high-side MOSFET for faster switching - the 12V SQJ202EP and 20V SQJ200EP provide high-performance alternatives to standard dual devices, which restrict the optimum combination of MOSFETs for high-current, high-frequency synchronous buck designs. Compared to using discrete components, the devices occupy less board space and can facilitate more compact PCB layouts.

The devices offer high-temperature operation to +175°C to provide the ruggedness and reliability required for automotive applications such as infotainment, telematics, navigation and LED lighting. The SQJ202EP is well-suited for applications with bus voltages less than or equal to 8V and offers extremely low maximum on-resistance down to 3.3mΩ for the Channel 2 low-side MOSFET. For applications with higher bus voltages, the 20V SQJ200EP features a slightly higher maximum on-resistance of 3.7mΩ. Both parts are 100% tested for gate resistance and avalanche. They are also RoHS-compliant and halogen-free.

Samples and production quantities of the SQJ200EP and SQJ202EP are available now, with lead times of 12 weeks for large orders.

Featured products

Upcoming Events

View all events
Latest global electronics news