To support these requirements the new DF2B6.8FS comes as a bidirectional diode with positive and negative clamping voltages of 6.8V. The DF2B6.8FS offers a minimum ESD immunity level of +/- 8kV in accordance with the IEC61000-4-2 contact discharge standard.
Toshiba’s new diode is supplied in an ultra-miniature, low-profile two-pin fSC package measuring just 1.0mm x 0.6mm x 0.48mm. As a result it is ideal for applications that require high component densities because board space is at a premium.
The DF2B6.8FS will operate with junction temperatures up to 150ºC and has a typical breakdown voltage of 6.8V (@1mA) in both directions. Typical capacitance at 1MHz and 0V is rated at 15pF.