Measuring 1mm by 1mm by 0.35mm, the device is 29% smaller and 36% thinner than switches in the mQFN6 package. This allows the DG3257 to save valuable PCB space in smartphones, tablets, and e-readers; wearable devices such as smart watches and fitness trackers; portable medical instrumentation; cameras and audio devices; IoT applications; computers and peripherals; and data storage devices.
While previous generation devices offer -3dB bandwidth of 300MHz, the DG3257 achieves extremely high bandwidth of over 700MHz.
This 5Ω SPDT device features break-before-make switching with a 17ns turn-on time and an ultra-low 100ps propagation delay.
The switch features ‑32dB crosstalk at 240MHz — a 10dB improvement over competing solutions — and -33dB off-isolation. The device is fabricated with a high density sub-micron CMOS process to deliver 50% lower parasitic capacitance CD(ON) of 9pF and CS(OFF) of 3pF.
The DG3257 handles bidirectional signal flow with minimal distortion and can be powered directly from a one-cell Li-ion battery.
Designed to operate from 1.65V to 5.5V, the DG3257 guarantees less than 1μA of leakage current in the power-down condition.
This feature prevents excessive current from feeding into the switch when the power supply is removed. The device has a 1.4V logic threshold to ensure low voltage TTL/CMOS compatibility.
When interfacing with low voltage MCUs, the switch offers guaranteed maximum power consumption of 1.5μA, which is 90% lower than competing devices.
The RoHS-compliant device offers ESD tolerance > 6kV (human body model) and latch up current of 300mA per JESD78.