Classified as SCM (or persistent memory), with the ability to retain its contents similar to NAND flash memory, XL-FLASH bridges the performance gap that exists between DRAM and NAND. While volatile memory solutions such as DRAM provide the access speed needed by demanding applications, that performance comes at a high cost.
As the cost-per-bit and scalability of DRAM levels off, this new SCM layer in the memory hierarchy addresses that issue with a high density, cost effective, non-volatile NAND flash memory solution. Poised for growth, industry analyst firm IDC estimates the SCM market will reach in excess of $3bn in 2022.
Sitting in between DRAM and NAND flash, XL-FLASH brings increased speed, reduced latency and higher storage capacities – at a lower cost than traditional DRAM. XL-FLASH will initially be deployed in an SSD format but could be expanded to memory channel attached devices that sit on the DRAM bus, such as future industry standard Non-Volatile Dual In-Line Memory Modules (NVDIMMs).
Key features
- 128 gigabit (Gb) die (in a 2-die, 4-die or 8-die package)
- 4kB page size for more efficient operating system reads and writes
- 16-plane architecture for more efficient parallelism
- Fast page read and programme times XL-FLASH provides a low read latency of less than 5 microseconds, approximately 10 times faster than existing TLC
As the inventor of NAND flash, as well as being the first company to announce 3D flash memory technology and a leader in process migrations, Toshiba Memory is well positioned to deliver SLC-based SCM with mature manufacturing, proven scalability and time-tested SLC reliability.
“XL-FLASH is the highest performing NAND available, thanks to our BiCS FLASH – used in SLC mode,” noted Axel Stoermann, Vice President, Toshiba Memory. “By only storing one-bit per cell, we’re able to greatly increase performance. And, because XL-FLASH is based on proven technologies that we already mass produce, our customers will be able to accelerate time to market with adoption of XL-FLASH as a Storage Class Memory solution.”
Sample shipments will start in September 2019, with mass production expected to begin in 2020.