Memory
SRAM devices suppress soft error occurrences
SRAM memory devices, which have a density of 8Mb, have been released by Renesas Electronics Europe. Expanding the company’s RMLV0816B and RMLV0808B series of Advanced Low-Power SRAM (Advanced LP SRAM), the devices utilise a fine fabrication process technology with a circuit linewidth of 110nm.
FRAM enables energy savings of up to 94%
An ultra-low-power FRAM device with an integrated binary counter function, the MB85RDP16LX has been introduced by Fujitsu Semiconductor Europe. Capable of enabling self-powering solutions such as the Wiegand wire-based platform from iC-Haus, the FRAM targets industrial automation applications involving energy harvesting for rotary encoders, motor control and sensors.
3D layer stacking & TSV technologies set to refresh memory
According to Yole Développement, both the compute (DDR3/DDR4) and mobile varieties (LPDDR3/LPDDR4) of DDR memory will reach the end of their respective journeys soon, as the DDR interface reportedly cannot run at data rates higher than 3.2Gb/s in a traditional computer main memory environment. Several DRAM memory architectures based on 3D layer stacking and Through-Silicon-Via (TSV) have evolved to carry memory technology forward...
SSDs offer reliability in server & datacentre applications
Toshiba announces two eSSDs, the HK3E2 for value-endurance workloads and the HK3R2 drive for read intensive workloads. These 6Gb/s SATA Enterprise SSDs join Toshiba’s broad portfolio of enterprise storage solutions featuring a variety of endurance ratings to meet the needs of specific application requirements and customer environments.
Polyoxometalates could solve flash memory conundrum
Flash memory is a popular form of electronic data storage commonly used in devices such as smartphones, cameras and memory sticks. However, there is a physical limit to the minimum size of the current design of data cells, which currently use metal-oxide-semiconductor components.
DDR4 SODIMMs provide higher performance & consume less power
At electronica 2014, from 11th to 14th November, Swissbit will be presenting it’s first DDR4 ECC SODIMM. Using the 4th gen DDR, the device can achieve higher data rates than when used with the DDR3, while consuming the same amount of power consumption. Featuring optimised data bus termination, dynamic bus inversion and CRC protection of the command/address bus, the 8GB SODIMM is designed for next-gen embedded boards.
Free evaluation kits of Dolphin Integration’s libraries
Dolphin Integration has announced MyDolphin, a free evaluation platform. Users on MyDolphin can evaluate its memory offering, thanks to free online generators and presentation sheets.
SuperFlash enables 'industry’s fastest erase times'
Manufactured with the company’s high-performance SuperFlash technology, which is claimed to provide the industry’s fastest erase times, Microchip has released a family of 1.8V Serial Quad I/O (SQI) SuperFlash memory devices. The 16Mb SST26WF016B performs sector and block erase commands in 18ms and full chip erase operations in 35ms.
Verification IP supports popular 3D memory standards
Cadence's Verification IP (VIP) supports all popular 3D memory standards, including Wide I/O 2, Hybrid Memory Cube (HMC), High Bandwidth Memory (HBM) and DDR4 3D Stacking (DDR4-3DS). The portfolio of memory VIP allows designers to accelerate the verification of memory interfaces and achieve earlier SoC verification closure for compute server applications, mobile devices, high-performance graphics and network applications.
MMB processor enables 10% die size reduction
To achieve a 10% reduction in total die size while maintaining product quality and performance, Marvell Semiconductor have utilised Synopsys' MMB (Multi-Memory Bus) processor for it's networking SoC. The processor, from Synopsys' DesignWare STAR Memory System, allowed Marvell to accelerate silicon bring-up and achieve silicon success.