The MN63Y1221-E1 product benefits from 8Kbit FeRAM non-volatile built-in memory with fast write and low power consumption, provides an I2C host interface, and comes in a small SON8 package.
The built-in 8Kbit FeRAM memory of the NFC tag IC enables 100 million write cycles and can be protected by a 128 bit password from unauthorised access. The component also features an energy harvesting output that allows powering the host by the energy harvested from the NFC magnetic field. The supply voltage range is 1.7-3.6V. The MN63Y1221-E1 is already in mass production and available directly through Panasonic and via the distributor Rutronik.
Thomas Portenlänger, Technical Marketing and Product Manager at Panasonic Automotive & Industrial Systems Europe, commented: “Our new MN63Y1221-E1 NFC tag IC provides three communication modes: RF, serial, and tunnel (the tunnel mode allows direct communication between the reader/writer and the host). Together with its global interoperability this makes the new device ideal for use in numerous different applications.”
