The MwT-7F GaAs MESFET delivers 21 dBm P1dB at 12 GHz and is ideally suited to applications requiring high-gain and medium linear power in the 500 MHz to 26 GHz frequency range.
Small signal gain is 15 dB.
Offered in a 365 x 250-micron chip, the MwT-7F can be used in military and hi-rel SWaP designs and is also available in multiple packaged configurations, all with MTBF values better than 1×108 hours at 150 C channel temperature.