Optimised NP25 transistors exhibit more DC and RF IV characteristics and provide 2dB higher maximum stable gain. Increased gain leads directly to higher power density and PAE under a range of tuning and bias conditions. This performance optimised process is fully qualified and supported with a design kit and transistor models.
The WIN NP25 technology is fabricated on four inch silicon carbide substrates and operates at a drain bias of 28V. At 10GHz, NP25 provides saturated output power of 5W/mm with 19dB linear gain and over 65% power added efficiency. These performance metrics make the NP25 process well suited for a variety of high power, broad bandwidth and linear transmit functions in the radar, satellite communications and wireless infrastructure markets.