The QPD0010 is an asymmetric, dual-path, discrete GaN on SiC HEMT in a DFN package operating from 2.5 to 2.7 GHz.
With 15 dB of gain, this device can deliver an average power of 15 W in a Doherty configuration or a Psat of 50.8 dBm at 2.6 GHz.
Operating from a 48V bias, the QPD0010 has applications in 5G massive MIMO, microcell and small cell base stations.