The Cree GaN HEMT MMIC process features high power density (4-6 watts/mm) transistors, slot vias, and high reliability (up to 225ºC operating channel temperatures), as well as scalable transistors. In addition, the Cree/AWR PDK leverages AWR’s Intelligent Net (iNet™) automated interconnect construction technology to automatically radius and fillet corners when connecting different parts together, thereby ensuring design-rule-check (DRC)-compliant layouts and eliminating the need for manual editing. The Cree/AWR PDK is also setup for ready electromagnetic (EM) extraction through AWR’s EXTRACT technology, which can save designers’ time by not having to manually edit schematics for EM results.
AWR – Process Design Kit (PDK) For Cree GAN HEMT MMIC Foundry
AWR Corporation, the innovation leader in high-frequency electronic design automation (EDA), announced today the release and immediate availability of a new process design kit (PDK) supporting the Cree, Inc. high-power gallium nitride (GaN) high electron mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) foundry process. The new Cree/AWR PDK enables MMIC designers to model Cree’s GaN HEMT MMIC process within AWR’s Microwave Office® software environment and enable the design of MMICs that offer more power bandwidth, higher efficiency, and a smaller footprint than can be achieved using conventional technologies such as GaAs.