The gallium nitride-on-silicon carbide (GaN-on-SiC) transistor delivers power and performance for cellular base station and RF applications in 5G massive MIMO, LTE, and WCDMA systems.
The HEMT is an asymmetric, dual-path amplifier in a small, 7.0 mm × 6.5 mm DFN package.
Utilising variable power inputs from 30 W to 60 W and drain voltages of +48 V, the QPD0011 operates between 3.3 GHz and 3.6 GHz and features up to 13.3 dB of gain, for ultra-efficient signal, peak, and power performance (up to 90 W) in Doherty design environments.
For development, Mouser also stocks the QPD0011EVB1 Evaluation Board.
It includes an example application circuit, allowing rapid prototyping when incorporated into existing designs.
Applications for the QPD0011 include macrocell and microcell base stations, active antennas, and asymmetric Doherty designs.