Claimed to deliver the best performance for isolated DC/DC primary and secondary MOSFETs, the AONS66916 MOSFET uses the company's Shield Gate technology Generation 2 technology. The 100V 3.6mOhm MOSFET is designed for high-density power supply use.
In synchronous rectification, it is essential to optimise the reverse recovery charge and reduce the voltage over-shoot to enable higher efficiency and robustness to critical high density telecomms and server applications. Available from Alpha and Omega Semiconductor, the Alpha Shield Gate Technology Generation 2 (AlphaSGT2) technology provides approximately 30% less RDS (ON), compared with AlphaSGT1, and robust capability for a greater safety margin, says the company.
The production technology is designed to be more robust with significant avalanche energy improvement, according to the company. It also reduces both conduction and switching losses. Using the AlphaSGT2 technology, circuit designers can prevent paralleling devices for lower turn-on resistance, enabling higher power density in power supply applications, such as datacomms and telecomms.
The AONS66916 is immediately available in production quantities with a lead-time of 15 weeks.